The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2017

Filed:

Mar. 20, 2014
Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventors:

Kazumasa Ohashi, Ibaraki, JP;

Takeo Okabe, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/34 (2006.01); C23C 14/34 (2006.01); C22C 27/04 (2006.01); C22C 1/04 (2006.01); C23C 14/16 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3426 (2013.01); C22C 27/04 (2013.01); C23C 14/3414 (2013.01); C22C 1/045 (2013.01); C23C 14/165 (2013.01);
Abstract

Provided is a tungsten sintered compact sputtering target containing iron as an impurity in an amount of 0.8 wtppm or less, and remainder being tungsten and other unavoidable impurities, wherein a range of iron concentration in a target structure is within a range of ±0.1 wtppm of an average concentration. Additionally provided is a tungsten sintered compact sputtering target, wherein a relative density of the target is 99% or higher, an average crystal grain size is 50 μm or less, and a crystal grain size range is 5 to 200 μm. The present invention aims to inhibit abnormal grain growth in the tungsten target by reducing the amount of iron in the tungsten sintered compact sputtering target.


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