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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10176974 B1

PDFFull Text
Date of Patent:
Jan. 08, 2019

Filed:

Sep. 28, 2015

Tungsten sputtering target and method for producing same

Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventors:

Kazumasa Ohashi, Ibaraki, JP;

Kunihiro Oda, Ibaraki, JP;

Assignee:

JX Nippon Mining & Metals Corporation, Tokyo, JP;

Attorney:

Howson & Howson LLP

Primary Examiner:

Michael A Band

Int. Cl.
CPC ...
H01J 37/34 (2006.01); C23C 14/14 (2006.01); C23C 14/34 (2006.01); C22C 45/10 (2006.01); C22C 27/04 (2006.01); B22F 1/00 (2006.01); B22F 3/10 (2006.01); B22F 7/00 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3429 (2013.01); B22F 1/0014 (2013.01); B22F 3/10 (2013.01); B22F 7/008 (2013.01); C22C 27/04 (2013.01); C22C 45/10 (2013.01); C23C 14/14 (2013.01); C23C 14/3414 (2013.01); B22F 2301/20 (2013.01); B22F 2301/255 (2013.01); B22F 2304/10 (2013.01); B22F 2998/10 (2013.01); H01L 21/285 (2013.01);
Abstract

A sputtering target containing 0.01 to 0.5 wt % of Ag, and remainder being W and unavoidable impurities. The object of the present invention is to provide a sputtering target capable of forming a film having a relatively low specific resistance by sputtering, wherein the obtained film is endowed with good uniformity, and in particular the sputtering target has superior characteristics upon forming thin films for semiconductor devices, as well as to provide a method for producing the foregoing sputtering target.

Find Patent Forward Citations

Ohashi, Kazumasa. (2019). Tungsten sputtering target and method for producing same (U.S. Patent No. 10176974). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10176974

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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