Takasuke Hashimoto

This inventor holds 11 USPTO granted patents and 1 published patent application. Top assignees: Nec Corporation, Nec Electronics Corporation. Active years: 1995-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takasuke Hashimoto. Retrieved from https://idiyas.com/inventor/takasuke-hashimoto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 11 (Patent Applications = 1)

% Patents Active = 90.9

Average Co-Inventor Count = 1.0

ph-index = 6

Forward Citations = 94(Granted Patents)

Company Filing History:

Nec Electronics Corporation

patents

Years Active: 1995-2004

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11 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6680234 - Semiconductor device having the effect that the drop in the current gain is kept to the minimum, when the substrate density is amplified and that the variation in the collector current is improved (2004-01-20),

2. 6570241 - Semiconductor device having the effect that the drop in the current gain is kept to the minimum, when the substrate density is amplified and that the variation in the collector current is improved (2003-05-27),

3. 6337251 - Method of manufacturing semiconductor device with no parasitic barrier (2002-01-08),

4. 6087675 - Semiconductor device with an insulation film having emitter contact (2000-07-11),

5. 6028344 - Bipolar transistor on a semiconductor-on-insulator substrate (2000-02-22),

6. 6001711 - Process of fabricating semiconductor device having gettering site layer (1999-12-14),

7. 5856702 - Polysilicon resistor and method of producing same (1999-01-05),

8. 5557118 - Hetero-junction type bipolar transistor (1996-09-17),

9. 5523614 - Bipolar transistor having enhanced high speed operation through reduced (1996-06-04),

10. 5475257 - Semiconductor device having an improved low resistive contact (1995-12-12),

11. 5438014 - Method of manufacturing semiconductor device (1995-08-01),

Title: Takasuke Hashimoto: Innovator in Semiconductor Technology

Introduction

Takasuke Hashimoto is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of Hashimoto's latest patents involves a semiconductor device designed to minimize the drop in current gain when substrate density is amplified. This innovation improves the variation in collector current. The device features a SiGe base bipolar transistor, which includes an emitter layer, a collector layer, and a SiGe base layer made of silicon containing germanium. Notably, the germanium concentration in the SiGe base layer increases from 0% to 10% from the emitter layer side towards the collector layer side.

Career Highlights

Throughout his career, Takasuke Hashimoto has worked with notable companies such as NEC Corporation and NEC Electronics Corporation. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technology.

Collaborations

Hashimoto has collaborated with various professionals in his field, including Tsutomu Tashiro. These partnerships have contributed to the advancement of his innovative projects.

Conclusion

Takasuke Hashimoto's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of efficient semiconductor devices.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: