The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2000
Filed:
Feb. 26, 1998
Applicant:
Inventor:
Takasuke Hashimoto, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257587 ; 257588 ; 257593 ; 257565 ; 257517 ;
Abstract
A bipolar transistor formed on a SOI substrate has a buried collector layer underlying an emitter region and a collector contact region for connection thereof, both of which are made of a doped polysilicon film deposited in a removed portion of an oxide film etched by wet etching and a collector contact groove, respectively. By reducing the area of the buried collector layer, the bipolar transistor has excellent frequency characteristics in a high-frequency range.
Hashimoto, Takasuke. (2000). Bipolar transistor on a semiconductor-on-insulator substrate (U.S. Patent No. 6028344). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6028344
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile