The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2004
Filed:
Aug. 29, 2002
Applicant:
Inventor:
Takasuke Hashimoto, Tokyo, JP;
Assignee:
NEC Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1311 ; H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/1311 ; H01L 2/100 ;
Abstract
A semiconductor device includes a SiGe base bipolar transistor. The SiGe base bipolar transistor includes an emitter layer, a collector layer and a SiGe base layer formed of silicon containing germanium. A Ge concentration of the SiGe base layer is increased from 0% to 10% from a side of the emitter layer towards a side of the collector layer.
Hashimoto, Takasuke. (2004). Semiconductor device having the effect that the drop in the current gain is kept to the minimum, when the substrate density is amplified and that the variation in the collector current is improved (U.S. Patent No. 6680234). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6680234
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile