The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 1995
Filed:
Dec. 14, 1994
Takasuke Hashimoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A polycrystalline silicon film pattern 3 having a thickness of below 120 nm is formed on a silicon oxide film 2 provided on the principal surface of a silicon substrate 1. The polycrystalline silicon film pattern 3 is covered with a boron silicate glass film 4. By heat treatment, boron is diffused from the boron silicate glass film 4 to the polycrystalline silicon film pattern 3 to form a polycrystalline silicon resistance element 5 containing boron at a density of above 1.times.10.sup.19 atoms/cm.sup.3. As a result, the temperature coefficient of the resistance element 5 comprising the polycrystalline film can be reduced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile