The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1999
Filed:
Apr. 18, 1997
Takasuke Hashimoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The invention relates to a polysilicon resistor made by forming a film of polysilicon doped with an impurity on a dielectric film on a semiconductor substrate and patterning the polysilicon film. An object of the invention is to provide a polysilicon resistor which has a low resistance value and occupies a small area. A slot is formed in the dielectric film and is filled with the polysilicon film. The dielectric film and the patterned polysilicon film are overlaid with a second dielectric film, and a pair of contact windows are opened in the second dielectric film such that each contact window is partly over an end section of the slot. A plurality of parallel slots can be formed in the first dielectric film to further lower the resistance value or to further reduce the area of the patterned polysilicon film. As an alternative, at least one slot is formed in the substrate and is filled with a polysilicon film after depositing a dielectric film on the substrate surface including the surfaces in the slot(s).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile