The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 1996
Filed:
Nov. 30, 1994
Applicant:
Inventor:
Takasuke Hashimoto, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257197 ; 257198 ; 257 77 ;
Abstract
A hetero-junction type bipolar transistor has an SiGe layer as a base layer and an SiC layer as an emitter layer. Between the SiGe layer and the SiC layer of the hetero-junction bipolar transistor, a monocrystalline layer having a lattice constant between the lattice constant of SiGe and that of SiC.
Hashimoto, Takasuke. (1996). Hetero-junction type bipolar transistor (U.S. Patent No. 5557118). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5557118
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile