The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1999
Filed:
Mar. 09, 1998
Applicant:
Inventor:
Takasuke Hashimoto, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438473 ; 438407 ; 438455 ; 438459 ; 438517 ; 438526 ;
Abstract
Phosphorous ion is implanted into an SOI substrate under the conditions that the concentration is maximized in the upper silicon layer of the SOI substrate so as to forming a heavily-doped damaged layer, and the heavily-doped damaged layer is partially cured through a lamp annealing so as to concurrently form a heavily-doped buried layer and a gettering site layer.
Hashimoto, Takasuke. (1999). Process of fabricating semiconductor device having gettering site layer (U.S. Patent No. 6001711). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6001711
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile