The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 1995
Filed:
Oct. 27, 1994
Takasuke Hashimoto, Tokyo, JP;
Tsutomu Tashiro, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The invention is a semiconductor device having a metal-semiconductor contact structure. The device includes a metal region having such a high conductivity as to serve as a contact plug. The device also includes a first semiconductor region having a first band gap and being so doped with one conductive type dopant as to exhibit a high conductivity. The device also includes a semiconductor film having a second band gap wider than the first band gap. The semiconductor film is in contact at its opposite surfaces with a part of the metal region and a part of the first semiconductor region respectively. The semiconductor film is doped with the one conductive type dopant so heavily as to suppress electrical current flow between the part of the metal region and the part of the first semiconductor region through the semiconductor film. The semiconductor film comprises amorphous silicon or poly-crystalline silicon. Alternatively, the second semiconductor film comprises non-doped amorphous silicon or non-doped poly-crystalline silicon.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile