The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2002
Filed:
Mar. 29, 2000
Takasuke Hashimoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a method of manufacturing a semiconductor device, a first insulating film is formed on a semiconductor substrate, a first conductive film is formed on the first insulating film, and a second insulating film is formed on the first conductive film. An opening is formed to the semiconductor substrate through the second insulting film, the first conductive film and the first insulting film to expose a portion of a surface of the semiconductor substrate and a portion of a surface of the first conductive film. The exposed surface portion of the first conductive film is covered by a covering film. Thermal treatment is carried out to clean the exposed surface portion of the semiconductor substrate. A spacer film is formed in the opening on the exposed surface portion of the semiconductor substrate, and then the covering film is removed. Subsequently, an electrode film is formed on the spacer film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile