Yokosuka, Japan

Takashi Shinohe

This inventor holds 105 USPTO granted patents and 2 published patent applications and 4 EPO patents, primarily in Semiconductor Devices (CPC class H01L29-1608). Top assignees: Kabushiki Kaisha Toshiba, Fuji Electric Co., Ltd., National Institute of Advanced Industrial Science and Technology. Active years: 1986-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takashi Shinohe. Retrieved from https://idiyas.com/inventor/takashi-shinohe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 105 

% Patents Active = 82.9

 

Average Co-Inventor Count = 3.0

ph-index = 15

Forward Citations = 710(Granted Patents)

Forward Citations (Not Self Cited) = 691(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Kawasaki, JP (1986 - 1988)
  • Yokohama, JP (1988 - 2001)
  • Kanagawa-ken, JP (2004 - 2017)
  • Kanagawa, JP (2011 - 2017)
  • Yokosuke, JP (2019)
  • Yokosuka, JP (1999 - 2022)

Company Filing History:


Years Active: 1986-2022

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Areas of Expertise:
Semiconductor Device
Fabrication Method
Thermal Treatments
Power Conversion
SiC Epitaxial Substrate
Schottky Barrier Diode
Inverter Circuit
Gate Driving Circuit
Transistor Coupling
Electric Power Conversion
Substrate Manufacturing
105 patents (USPTO):Explore Patents

Title: Takashi Shinohe: A Pioneer in Semiconductor Innovation

Introduction: Takashi Shinohe, a renowned inventor based in Yokosuka, JP, has made significant contributions to the world of technology with his groundbreaking innovations. With an impressive portfolio of 105 patents, Shinohe has established himself as a trailblazer in the field of semiconductor devices.

Latest Patents: Shinohe's recent patents showcase his expertise in the semiconductor industry. One of his latest inventions includes a semiconductor device with a p-type SiC region, a gate insulating film, and a gate electrode incorporating a p-type impurity and 3C—SiC. Another patent features a semiconductor device with a SiC semiconductor layer, a gate electrode, a gate insulating film, and a region containing elements like antimony, scandium, and yttrium.

Career Highlights: Shinohe's illustrious career includes stints at prestigious companies such as Toshiba and the National Institute of Advanced Industrial Science and Technology. His innovative work in the development of semiconductor devices has earned him global recognition and respect in the industry.

Collaborations: Throughout his career, Shinohe has collaborated with talented individuals such as Tatsuo Shimizu and Johji Nishio. Together, they have worked on cutting-edge projects that have pushed the boundaries of semiconductor technology.

Conclusion: Takashi Shinohe's relentless dedication to innovation and his pioneering spirit have cemented his legacy as a true visionary in the field of semiconductor devices. His work serves as an inspiration for aspiring inventors to dream big and strive for excellence in their pursuit of technological advancement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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