The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Feb. 05, 2020
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/04 (2006.01); H01L 29/167 (2006.01); H01L 29/49 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/049 (2013.01); H01L 29/045 (2013.01); H01L 29/167 (2013.01); H01L 29/4966 (2013.01); H01L 29/66068 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/7397 (2013.01);
Abstract
A semiconductor device according to embodiments includes a p-type SiC region, a gate insulating film disposed on the p-type SiC region, and a gate electrode disposed on the gate insulating film and including a p-type impurity and 3C—SiC.