The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Feb. 11, 2015
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Tatsuo Shimizu, Shinagawa, JP;
Takashi Shinohe, Yokosuka, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0312 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/47 (2006.01); H01L 29/167 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01); H01L 21/265 (2006.01); H01L 29/36 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/046 (2013.01); H01L 21/0455 (2013.01); H01L 21/0485 (2013.01); H01L 21/0495 (2013.01); H01L 21/26506 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01); H01L 29/4236 (2013.01); H01L 29/47 (2013.01); H01L 29/6606 (2013.01); H01L 29/7806 (2013.01); H01L 29/7813 (2013.01); H01L 29/872 (2013.01); H01L 29/0657 (2013.01); H01L 29/41766 (2013.01); H01L 29/45 (2013.01);
Abstract
A semiconductor device of according to an embodiment of the present disclosure includes a n-type SiC layer; a SiC region provided on the n-type SiC layer and containing H (hydrogen) or D (deuterium) in an amount of 1×10cmor more and 1×10cmor less; and a metal layer provided on the SiC region.