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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10079282 B1

PDFFull Text
Date of Patent:
Sep. 18, 2018

Filed:

Aug. 29, 2014

Semiconductor device and method of manufacturing the same

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Mariko Suzuki, Yokohama, JP;

Tadashi Sakai, Yokohama, JP;

Chiharu Ota, Kawasaki, JP;

Kazuto Takao, Tsukuba, JP;

Takashi Shinohe, Yokosuka, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Dale E Page

Assistant Examiner:

Quovaunda V Jefferson

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/00 (2006.01); H01L 29/16 (2006.01); H01L 29/868 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/861 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1602 (2013.01); H01L 21/0262 (2013.01); H01L 21/02376 (2013.01); H01L 21/02433 (2013.01); H01L 21/02527 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/041 (2013.01); H01L 21/042 (2013.01); H01L 29/045 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/6603 (2013.01); H01L 29/66037 (2013.01); H01L 29/7325 (2013.01); H01L 29/861 (2013.01); H01L 29/868 (2013.01);
Abstract

A semiconductor device according to an embodiment includes an i-type or a p-type first diamond semiconductor layer, an n-type second diamond semiconductor layer provided on the first diamond semiconductor layer, a mesa structure and an n-type first diamond semiconductor region provided on the side surface. The mesa structure includes the first diamond semiconductor layer, the second diamond semiconductor layer, a top surface with a plane orientation of ±10 degrees or less from a {100} plane, and a side surface inclined by 20 to 90 degrees with respect to a direction of <011>±20 degrees from the {100} plane. The first diamond semiconductor region is in contact with the second diamond semiconductor layer and has an n-type impurity concentration lower than an n-type impurity concentration of the second diamond semiconductor layer.

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