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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10319819 B1

PDFFull Text
Date of Patent:
Jun. 11, 2019

Filed:

Dec. 21, 2016

Semiconductor device and method for manufacturing the same

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Tatsuo Shimizu, Shinagawa, JP;

Takashi Shinohe, Yokosuka, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Ahmed N Sefer

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/167 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 21/265 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/0214 (2013.01); H01L 21/046 (2013.01); H01L 21/049 (2013.01); H01L 21/26506 (2013.01); H01L 29/045 (2013.01); H01L 29/167 (2013.01); H01L 29/4236 (2013.01); H01L 29/66068 (2013.01); H01L 29/7393 (2013.01); H01L 29/7395 (2013.01); H01L 29/78 (2013.01); H01L 29/7802 (2013.01); H01L 29/7397 (2013.01);
Abstract

A semiconductor device according to an embodiment includes a SiC semiconductor layer, a gate electrode, a gate insulating film provided between the SiC semiconductor layer and the gate electrode, and a region that is provided between the SiC semiconductor layer and the gate insulating film and includes at least one element selected from the group consisting of antimony (Sb), scandium (Sc), yttrium (Y), lanthanum (La), and lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu). The concentration of the at least one element is equal to or greater than 1×10cmand equal to or less than 2.4×10cm.

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