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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10177009 B1

PDFFull Text
Date of Patent:
Jan. 08, 2019

Filed:

Aug. 10, 2017

Manufacturing method for semiconductor device including first and second thermal treatments

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Johji Nishio, Machida, JP;

Tatsuo Shimizu, Shinagawa, JP;

Takashi Shinohe, Yokosuka, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Eric A Ward

Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/324 (2006.01); H01L 29/32 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); H01L 29/045 (2013.01); H01L 29/1054 (2013.01); H01L 29/32 (2013.01); H01L 29/6606 (2013.01); H01L 29/66068 (2013.01); H01L 29/7802 (2013.01); H01L 29/8613 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/046 (2013.01); H01L 29/1608 (2013.01);
Abstract

A semiconductor device includes: an SiC substrate having a first surface and a second surface; a first conductivity type SiC layer disposed on the first surface side of the SiC substrate, and including a low level density region having Zlevel density of 1×10cmor less measured by deep level transient spectroscopy (DLTS); a second conductivity type SiC region disposed on a surface of the SiC layer; a first electrode disposed on the SiC region; and a second electrode disposed on the second surface side of the SiC substrate.

Find Patent Forward Citations

Nishio, Johji. (2019). Manufacturing method for semiconductor device including first and second thermal treatments (U.S. Patent No. 10177009). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10177009

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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