The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2017
Filed:
Feb. 03, 2015
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor device includes a first semiconductor layer; a second semiconductor layer having a larger band gap than the first semiconductor layer; a third semiconductor layer having a smaller band gap than the second semiconductor layer; a first electrode being in contact with the third semiconductor layer; a second electrode being in contact with the third semiconductor layer; and a third electrode provided between the third semiconductor layer in contact with the first electrode, the second semiconductor layer directly below the first electrode, and the first semiconductor layer directly below the first electrode, and the third semiconductor layer in contact with the second electrode, the second semiconductor layer directly below the second electrode, and the first semiconductor layer directly below the second electrode, being in contact with the third semiconductor layer, the second semiconductor layer, and the first semiconductor layer via insulating film.