The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Aug. 31, 2016
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Tatsuo Shimizu, Shinagawa, JP;
Takashi Shinohe, Yokosuka, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 29/872 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/47 (2006.01); H01L 29/06 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/0495 (2013.01); H01L 29/0619 (2013.01); H01L 29/1608 (2013.01); H01L 29/47 (2013.01); H01L 29/8725 (2013.01); H01L 29/045 (2013.01);
Abstract
A semiconductor device according to an embodiment includes a first metal layer, a second metal layer, an n-type first SiC region provided between the first metal layer and the second metal layer and having an n-type impurity concentration of 1×10cmor less, and a conductive layer provided between the first SiC region and the first metal layer and containing titanium (Ti), oxygen (O), and at least one element selected from the group consisting of vanadium (V), niobium (Nb), and tantalum (Ta).