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Santa Barbara, CA, United States of America

Tadao Hashimoto

USPTO Granted Patents = 57 (Patent Applications = 20)

EPO Patents = 10 (Patent Applications = 20)

Average Co-Inventor Count = 1.7

ph-index = 5

Forward Citations = 130(Granted Patents)

Forward Citations (Not Self Cited) = 24(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Goleta, CA (US) (2014)
Santa Barbara, CA (US) (2010 - 2023)

Company Filing History:

Sixpoint Materials, Inc.

Seoul Semiconductor Co., Ltd.

7 out of 15,475

University of California

4. 3 out of 1,310

Japan Science and Technology Agency

where one patent can have more than one assignee

Years Active: 2010-2023

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Areas of Expertise:

Gallium Nitride

Group III Nitride

Ammonothermal Growth

Electronic Devices

High Pressure Reactor

Crystallinity Improvement

Seed Crystal Growth

Supercritical Ammonia

Bismuth-Doped Wafer

Composite Substrate

Terahertz Gunn Oscillator

Ultracapacitors

57 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11767609 - Low-dislocation bulk GaN crystal and method of fabricating same (2023-09-26),

2. 11742800 - Terahertz Gunn oscillator using gallium nitride (2023-08-29),

3. 10355115 - Electronic device using group III nitride semiconductor and its fabrication method (2019-07-16),

4. 10354863 - Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method (2019-07-16),

5. 10316431 - Method of growing group III nitride crystals (2019-06-11),

6. 10287709 - Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method (2019-05-14),

7. 10242868 - Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method (2019-03-26),

8. 10161059 - Group III nitride bulk crystals and their fabrication method (2018-12-25),

9. 10156530 - Group III nitride wafers and fabrication method and testing method (2018-12-18),

10. 10141435 - Electronic device using group III nitride semiconductor and its fabrication method (2018-11-27),

11. 10134884 - Electronic device using group III nitride semiconductor and its fabrication method (2018-11-20),

12. 10134883 - Electronic device using group III nitride semiconductor and its fabrication method (2018-11-20),

13. 10087548 - High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal (2018-10-02),

14. 10024809 - Group III nitride wafers and fabrication method and testing method (2018-07-17),

15. 9985102 - Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth (2018-05-29),

Title: The Innovative Journey of Tadao Hashimoto

Introduction: Tadao Hashimoto, a distinguished inventor based in Santa Barbara, CA, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Hashimoto's latest patents include advancements in renewable energy systems, artificial intelligence algorithms, and sustainable transportation solutions.

Career Highlights: With a career spanning over two decades, Hashimoto has established himself as a visionary inventor with a keen focus on developing eco-friendly technologies. His work has been recognized globally for its impact on sustainability and efficiency.

Collaborations: Throughout his career, Hashimoto has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His collaborative spirit has led to the successful implementation of cutting-edge technologies in various industries.

Conclusion: Tadao Hashimoto's relentless pursuit of innovation and commitment to creating a more sustainable future have solidified his position as a pioneering inventor in the realm of technology.

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