The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
May. 03, 2021
Applicant:
Sixpoint Materials, Inc., Buellton, CA (US);
Inventor:
Tadao Hashimoto, Santa Barbara, CA (US);
Assignee:
SixPoint Materials, Inc., Buellton, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
C30B 7/10 (2006.01); C25F 3/12 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C30B 7/105 (2013.01); C25F 3/12 (2013.01); C30B 29/406 (2013.01);
Abstract
GaN wafers and bulk crystal have dislocation density approximately 1/10 of dislocation density of seed used to form the bulk crystal and wafers. Masks are formed selectively on GaN seed dislocations, and new GaN grown on the seed has fewer dislocations and often 1/10 or less of dislocations present in seed.