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Buellton, CA, United States of America

Sixpoint Materials, Inc.

USPTO Granted Patents = 50

EPO Patents = 10

Trademarks = 1

Forward Citations = 125

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6 inventors (with patents filed for the assignee):

Tadao Hashimoto (50 out of 57 patents)

Edward Letts (26 out of 26 patents)

Masanori Ikari (10 out of 10 patents)

4. Sierra Hoff (8 out of 8 patents)

5. Daryl Key (4 out of 4 patents)

6. Daisuke Ueda (4 out of 112 patents)

7. Masanori Ikari (0 patent)

8. Masanori Ikari (0 patent)

9. Masanori Ikari (0 patent)

Core Competencies:

Gallium Nitride

Crystal Growth

Electronic Devices

Group III Nitride

High-Pressure Vessel

Ammonothermal Growth

Substrate Fabrication

Bismuth-Doped Wafer

Composite Substrate

Laser Slicing

Thermal Management

Ultracapacitors

50 patents: Sort by Forward Citations

1. 11767609 - Low-dislocation bulk GaN crystal and method of fabricating same (2023-09-26),

2. 11742800 - Terahertz Gunn oscillator using gallium nitride (2023-08-29),

3. 10355115 - Electronic device using group III nitride semiconductor and its fabrication method (2019-07-16),

4. 10354863 - Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method (2019-07-16),

5. 10316431 - Method of growing group III nitride crystals (2019-06-11),

6. 10287709 - Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method (2019-05-14),

7. 10242868 - Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method (2019-03-26),

8. 10161059 - Group III nitride bulk crystals and their fabrication method (2018-12-25),

9. 10156530 - Group III nitride wafers and fabrication method and testing method (2018-12-18),

10. 10141435 - Electronic device using group III nitride semiconductor and its fabrication method (2018-11-27),

11. 10134884 - Electronic device using group III nitride semiconductor and its fabrication method (2018-11-20),

12. 10134883 - Electronic device using group III nitride semiconductor and its fabrication method (2018-11-20),

13. 10087548 - High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal (2018-10-02),

14. 10024809 - Group III nitride wafers and fabrication method and testing method (2018-07-17),

15. 9985102 - Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth (2018-05-29),

Sixpoint Materials, Inc. is a technology company based in Buellton, California, specializing in advanced Gallium Nitride (GaN) technology. The company focuses on the development and manufacturing of high-performance electronic devices utilizing GaN, which is known for its efficiency and effectiveness in various applications. Key areas of expertise include crystal growth, substrate fabrication, and innovative techniques such as ammonothermal growth and bismuth-doped wafer production, positioning Sixpoint as a leader in the Group III Nitride domain.

Profile summary based on public USPTO records.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

50 Patents

#1 in Buellton, CA

#1,646 in California

#6,999 in US

#13,996 in the World

Buellton, CA, United States of America

Sixpoint Materials, Inc.

Forward Citations = 125

6 inventors:

Tadao Hashimoto (50 out of 57 patents)

Edward Letts (26 out of 26 patents)

Masanori Ikari (10 out of 10 patents)

4. Sierra Hoff (8 out of 8 patents)

5. Daryl Key (4 out of 4 patents)

Please report any incorrect information to [email protected]

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