For the Inventor, By the Inventor

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Buellton, CA, United States of America

Sixpoint Materials, Inc.

USPTO Granted Patents = 50

EPO Patents = 10

Trademarks = 1

Forward Citations = 125

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6 inventors (with patents filed for the assignee):

Tadao Hashimoto (50 out of 57 patents)

Edward Letts (26 out of 26 patents)

Masanori Ikari (10 out of 10 patents)

4. Sierra Hoff (8 out of 8 patents)

5. Daryl Key (4 out of 4 patents)

6. Daisuke Ueda (4 out of 112 patents)

7. Masanori Ikari (0 patent)

8. Masanori Ikari (0 patent)

9. Masanori Ikari (0 patent)

Core Competencies:

Gallium Nitride

Group III Nitride

Bulk Crystals

Semiconductor Fabrication

Ammonothermal Growth

High-Pressure Reactor

Electronic Devices

Crystal Growth Methods

Bismuth-Doped Wafers

Composite Substrates

Terahertz Oscillators

Ultracapacitors

50 patents: Sort by Forward Citations

1. 11767609 - Low-dislocation bulk GaN crystal and method of fabricating same (2023-09-26),

2. 11742800 - Terahertz Gunn oscillator using gallium nitride (2023-08-29),

3. 10355115 - Electronic device using group III nitride semiconductor and its fabrication method (2019-07-16),

4. 10354863 - Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method (2019-07-16),

5. 10316431 - Method of growing group III nitride crystals (2019-06-11),

6. 10287709 - Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method (2019-05-14),

7. 10242868 - Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method (2019-03-26),

8. 10161059 - Group III nitride bulk crystals and their fabrication method (2018-12-25),

9. 10156530 - Group III nitride wafers and fabrication method and testing method (2018-12-18),

10. 10141435 - Electronic device using group III nitride semiconductor and its fabrication method (2018-11-27),

11. 10134884 - Electronic device using group III nitride semiconductor and its fabrication method (2018-11-20),

12. 10134883 - Electronic device using group III nitride semiconductor and its fabrication method (2018-11-20),

13. 10087548 - High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal (2018-10-02),

14. 10024809 - Group III nitride wafers and fabrication method and testing method (2018-07-17),

15. 9985102 - Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth (2018-05-29),

SixPoint Materials, Inc. is a leading provider of advanced semiconductor materials. With expertise in innovative material research, development, and production, SixPoint Materials aims to meet the ever-growing demand for high-quality materials in the semiconductor industry. The company focuses on delivering customized material solutions that enable the development of cutting-edge semiconductor devices. With a commitment to quality, reliability, and customer satisfaction, SixPoint Materials continues to drive advancements in the semiconductor industry.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Sep 15 2026

50 Patents

#1 in Buellton, CA

#1,642 in California

#6,990 in US

#13,970 in the World

Buellton, CA, United States of America

Sixpoint Materials, Inc.

Forward Citations = 125

6 inventors:

Tadao Hashimoto (50 out of 57 patents)

Edward Letts (26 out of 26 patents)

Masanori Ikari (10 out of 10 patents)

4. Sierra Hoff (8 out of 8 patents)

5. Daryl Key (4 out of 4 patents)

Please report any incorrect information to [email protected]

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