Buellton, CA, United States of America

Edward Letts

USPTO Granted Patents = 26 

 

Average Co-Inventor Count = 2.7

ph-index = 5

Forward Citations = 98(Granted Patents)


Company Filing History:


Years Active: 2012-2019

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26 patents (USPTO):Explore Patents

Title: Edward Letts – Innovator in Gallium Nitride Technology

Introduction

Edward Letts, located in Buellton, CA, is a distinguished inventor with a remarkable portfolio of 26 patents. His contributions primarily focus on advancements in gallium nitride (GaN) technology, which have significant implications in the fields of electronics and materials science.

Latest Patents

Among Letts' latest innovations is a patent for a seed crystal used for the growth of gallium nitride bulk crystal in supercritical ammonia. This invention introduces a unique method of supporting a GaN layer on a metallic plate with a matching coefficient of thermal expansion. The creation of a bonding metal not only secures the GaN layer but also protects the metallic plate from corrosion during the GaN growth process.

Another notable patent from Letts details a method for growing group III nitride crystals, including GaN, using the ammonothermal approach. This process involves growing an ingot on both sides of a seed, allowing for the production of wafers that are then sliced for further use. Notably, the wafer containing the initial seed crystal is designed to be thicker, ensuring its structural integrity during subsequent growth stages.

Career Highlights

Edward Letts has gained valuable experience working with prominent companies such as SixPoint Materials, Inc. and Seoul Semiconductor Co., Ltd. His work in these organizations has facilitated significant developments in semiconductor technologies, particularly in enhancing the efficiency and quality of nitride materials.

Collaborations

Throughout his career, Letts has collaborated with other renowned professionals in the field, including notable coworkers Tadao Hashimoto and Masanori Ikari. These partnerships have undoubtedly contributed to the innovative strides made in nitride crystal growth technologies.

Conclusion

Edward Letts exemplifies the spirit of innovation within the realm of materials science and semiconductor technology. His 26 patents reflect a commitment to pushing the boundaries of what is possible with gallium nitride. As he continues to influence the industry through his work, his contributions remain pivotal for future advancements.

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