The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Feb. 25, 2009
Tadao Hashimoto, Santa Barbara, CA (US);
Edward Letts, Buellton, CA (US);
Masanori Ikari, Santa Barbara, CA (US);
Tadao Hashimoto, Santa Barbara, CA (US);
Edward Letts, Buellton, CA (US);
Masanori Ikari, Santa Barbara, CA (US);
SixPoint Materials, Inc., Buellton, CA (US);
Abstract
The present invention discloses a production method for group III nitride ingots or pieces such as wafers. To solve the coloration problem in the wafers grown by the ammonothermal method, the present invention composed of the following steps; growth of group III nitride ingots by the ammonothermal method, slicing of the ingots into wafers, annealing of the wafers in a manner that avoids dissociation or decomposition of the wafers. This annealing process is effective to improve transparency of the wafers and/or otherwise remove contaminants from wafers.