The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Mar. 15, 2013
Sixpoint Materials, Inc., Buellton, CA (US);
Seoul Semiconductor Co., Ltd., Seoul, KR;
Tadao Hashimoto, Santa Barbara, CA (US);
Edward Letts, Buellton, CA (US);
Sierra Hoff, Solvang, CA (US);
SixPoint Materials, Inc., Buelton, CA (US);
Seoul Semiconductor Co., Ltd., Seoul, KR;
Abstract
The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.