The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Mar. 15, 2013
Applicants:

Sixpoint Materials, Inc., Buellton, CA (US);

Seoul Semiconductor Co., Ltd., Seoul, KR;

Inventors:

Tadao Hashimoto, Santa Barbara, CA (US);

Edward Letts, Buellton, CA (US);

Sierra Hoff, Solvang, CA (US);

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/201 (2006.01); H01L 29/20 (2006.01); C30B 7/10 (2006.01); C30B 29/40 (2006.01); C30B 33/10 (2006.01); H01L 21/02 (2006.01); C30B 33/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/201 (2013.01); C30B 7/105 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 33/00 (2013.01); C30B 33/10 (2013.01); H01L 21/02013 (2013.01); H01L 21/02019 (2013.01); H01L 29/2003 (2013.01);
Abstract

The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.


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