The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

Sep. 26, 2017
Applicant:

Sixpoint Materials, Inc., Buellton, CA (US);

Inventors:

Tadao Hashimoto, Santa Barbara, CA (US);

Edward Letts, Buellton, CA (US);

Daryl Key, La Canada, CA (US);

Assignee:

SixPoint Materials, Inc., Buellton, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/203 (2006.01); C01G 15/00 (2006.01); C01C 1/00 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02389 (2013.01); H01L 21/2007 (2013.01); H01L 21/2036 (2013.01); C01C 1/00 (2013.01); C01G 15/00 (2013.01); H01L 21/28194 (2013.01);
Abstract

In one instance, the seed crystal of this invention provides a nitrogen-polar c-plane surface of a GaN layer supported by a metallic plate. The coefficient of thermal expansion of the metallic plate matches that of GaN layer. The GaN layer is bonded to the metallic plate with bonding metal. The bonding metal not only bonds the GaN layer to the metallic plate but also covers the entire surface of the metallic plate to prevent corrosion of the metallic plate and optionally spontaneous nucleation of GaN on the metallic plate during the bulk GaN growth in supercritical ammonia. The bonding metal is compatible with the corrosive environment of ammonothermal growth.


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