The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Dec. 28, 2015
Sixpoint Materials, Inc., Buellton, CA (US);
Seoul Semiconductor Co., Ltd., Seoul, KR;
Tadao Hashimoto, Santa Barbara, CA (US);
Edward Letts, Buellton, CA (US);
Sierra Hoff, Tucson, AZ (US);
SixPoint Materials, Inc., Buellton, CA (US);
Seoul Semiconductor Co., Ltd., Seoul, KR;
Abstract
The present invention discloses a semi-insulating wafer of GaAlInN (0≦x≦1, 0≦x+y≦1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 10ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 10cm. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.