The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
May. 24, 2015
Sixpoint Materials, Inc., Buellton, CA (US);
Seoul Semiconductor Co., Ltd., Danwon-gu, Ansan-si, Gyeonggi-do, KR;
Tadao Hashimoto, Santa Barbara, CA (US);
Edward Letts, Buellton, CA (US);
SixPoint Materials, Inc., Buellton, CA (US);
Seoul Semiconductor Co., Ltd., Ansan-si, KR;
Abstract
In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as GaAlInN (0≦x1≦1, 0≦x1+y1≦1) and the seed crystal is expressed as GaAlInN (0≦x2≦1, 0≦x2+y2≦1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.