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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10134883 B1

PDFFull Text
Date of Patent:
Nov. 20, 2018

Filed:

Oct. 27, 2017

Electronic device using group iii nitride semiconductor and its fabrication method

Applicant:

Sixpoint Materials, Inc., Buellton, CA (US);

Inventors:

Tadao Hashimoto, Santa Barbara, CA (US);

Daisuke Ueda, Osaka, JP;

Assignee:

SixPoint Materials, Inc., Buellton, CA (US);

Attorney:

Strategic Innovation IP Law Offices, P.C.

Primary Examiner:

William Coleman

Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 29/737 (2006.01); C30B 7/10 (2006.01); C30B 25/20 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 21/306 (2006.01); H01L 29/32 (2006.01); H01L 29/36 (2006.01); H01L 29/45 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01); H01L 29/808 (2006.01); H01L 29/861 (2006.01); H01L 29/04 (2006.01); H01L 29/423 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7371 (2013.01); C30B 7/105 (2013.01); C30B 25/20 (2013.01); C30B 29/406 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02631 (2013.01); H01L 21/02634 (2013.01); H01L 21/02639 (2013.01); H01L 21/28575 (2013.01); H01L 21/30621 (2013.01); H01L 29/045 (2013.01); H01L 29/0696 (2013.01); H01L 29/1029 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/452 (2013.01); H01L 29/66204 (2013.01); H01L 29/66219 (2013.01); H01L 29/66318 (2013.01); H01L 29/66356 (2013.01); H01L 29/66462 (2013.01); H01L 29/66924 (2013.01); H01L 29/7391 (2013.01); H01L 29/7787 (2013.01); H01L 29/7788 (2013.01); H01L 29/8083 (2013.01); H01L 29/8611 (2013.01); H01L 21/3065 (2013.01); H01L 29/42304 (2013.01);
Abstract

The present invention discloses an electronic device formed of a group III nitride. In one embodiment, a substrate is fabricated by the ammonothermal method and a drift layer is fabricated by hydride vapor phase epitaxy. After etching a trench, p-type contact pads are made by pulsed laser deposition followed by n-type contact pads by pulsed laser deposition. The bandgap of the p-type contact pad is designed larger than that of the drift layer. Upon forward bias between p-type contact pads (gate) and n-type contact pads (source), holes and electrons are injected into the drift layer from the p-type contact pads and n-type contact pads. Injected electrons drift to the backside of the substrate (drain).

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