This inventor holds 149 USPTO granted patents and 12 published patent applications and 5 EPO patents, primarily in LED Technology (CPC class H01L21-76254). Top assignees: Silicon Genesis Corporation, Photon Dynamics, Inc., Apple Inc.. Active years: 1989-2022.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Inventors with similar research interests:
Location History:
- San Jose, CA (US) (1989 - 1992)
- Los Gatos, CA (US) (1991 - 2010)
- Aptos, CA (US) (2002 - 2018)
- Saratoga, CA (US) (2018 - 2022)
- Santa Clara, CA (US) (2018 - 2022)
Company Filing History:
107 out of 150 
31 out of 78 
5 out of 43,562 
Years Active: 1989-2022
Areas of Expertise:
Title: Francois J Henley: A Remarkable Inventor Shaping the Future
Introduction:
In the realm of innovation and patents, one name that shines brightly is Francois J Henley. With a strong presence in Aptos, CA (US), Henley has made significant contributions to the field of semiconductor substrates and LED structures. Let's delve into his latest patents, his career highlights, notable collaborations, and the impact of his work.
Latest Patents:
Henley's pursuit of excellence is evident in his impressive portfolio of 149 patents. One notable patent in his roster is "Layer Transfer of Films Utilizing Controlled Shear Region." This invention revolutionizes the process of cleaving films from semiconductor substrates, optimizing shear control in the cleave region. Henley's methodology involves carefully maintaining the in-plane shear component (KII) near zero, allowing for efficient cleaving while minimizing undesired shear. Alternatively, in certain embodiments, the KII component is strategically kept high, facilitating fracture propagation.
Another noteworthy patent is the "Light Emitting Diode (LED) Mass-Transfer Apparatus and Method of Manufacture." Henley's inventive approach enables the high-speed and flexible mass-transfer of LED arrays from a source substrate to a target substrate. By utilizing beam-addressed release (BAR) mass-transfer methods in conjunction with functional testing of Known Good Die (KGD), this invention streamlines the LED fabrication process, minimizing additional steps and enhancing yield.
Career Highlights:
Henley's professional journey has been impactful, with notable roles at prominent companies like Silicon Genesis Corporation and Photon Dynamics, Inc. While working at Silicon Genesis Corporation, Henley contributed significantly to the development of layer transfer technologies, advancing the field of semiconductor substrates. Additionally, his tenure at Photon Dynamics, Inc. marked a pivotal period for the company's growth and innovation in LED technology.
Collaborations:
Henley's collaborations with talented individuals have played a crucial role in shaping his inventive endeavors. Notably, he has worked closely with Nathan Cheung and Nathan W Cheung, who have undoubtedly contributed their expertise to the shared projects. Such collaborations highlight the power of teamwork in driving groundbreaking innovations.
Conclusion:
Francois J Henley's journey as an inventor and his remarkable contributions to the fields of semiconductor substrates and LED structures have left an indelible mark on the industry. His numerous patents, including those related to controlled shear region cleaving and LED mass-transfer, are testaments to his ingenuity and dedication. As the world continues to seek breakthroughs in these fields, Henley's work serves as a guiding light for future innovators.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile