The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Sep. 07, 2018
Applicant:
Silicon Genesis Corporation, Santa Clara, CA (US);
Inventor:
Francois J. Henley, Saratoga, CA (US);
Assignee:
Silicon Genesis Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/06 (2006.01); C30B 33/00 (2006.01); C30B 33/06 (2006.01); B28D 5/04 (2006.01); H01L 21/02 (2006.01); C01B 33/02 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
C30B 29/06 (2013.01); B28D 5/045 (2013.01); C01B 33/02 (2013.01); C30B 33/00 (2013.01); C30B 33/06 (2013.01); H01L 21/0201 (2013.01); H01L 21/02027 (2013.01); H01L 31/1804 (2013.01);
Abstract
A shaped crystalline ingot for an ion cleaving process has a major surface that is substantially planar, a first side face that is substantially planar along a first direction orthogonal to the major surface, and a second side face that is substantially planar along a second direction orthogonal to the major surface. The ion cleaving process is a process in which ions are implanted into the shaped crystalline ingot to form a cleave plane that separates a substrate comprising the major surface from the shaped crystalline ingot.