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Warrington, United Kingdom

Steven Thomas Peake

This inventor holds 33 USPTO granted patents and 4 published patent applications and 3 EPO patents, primarily in Semiconductor Devices. Top assignees: Koninklijke Philips Corporation N.v., Nxp B.v., Nexperia B.v.. Active years: 2003-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Steven Thomas Peake. Retrieved from https://idiyas.com/inventor/steven-thomas-peake

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 33 

% Patents Active = 72.7

 

Average Co-Inventor Count = 1.8

ph-index = 10

Forward Citations = 279(Granted Patents)


Location History:

  • Chesire, GB (2005)
  • Woolston, GB (2009)
  • Stockport, GB (2017)
  • Warrington, GB (2003 - 2018)

Company Filing History:

goldMedal13 out of 21,885 
 
Koninklijke Philips Corporation N.v.
 patents
silverMedal13 out of 5,322 
 
Nxp B.v.
 patents
bronzeMedal6 out of 174 
 
Nexperia B.v.
 patents
4. 1 out of 1,231 
 
International Rectifier Corporation
 patents

Years Active: 2003-2026

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Areas of Expertise:
Semiconductor Device
TrenchMOS
PowerMOS
Circuitry
Voltage Limiting
Field Effect Transistor
Manufacturing Method
Schottky Barriers
Trench-gate
Power Semiconductor
Edge Termination
Cellular MOSFET
33 patents (USPTO):Explore Patents
1. 12622228 - Semiconductor device and a method for manufacturing a semiconductor device (2026-05-05),
2. 10153365 - Semiconductor device and a method of making a semiconductor device (2018-12-11),
3. 10032907 - TrenchMOS (2018-07-24),
4. 9985092 - PowerMOS (2018-05-29),
5. 9941265 - Circuitry with voltage limiting and capactive enhancement (2018-04-10),
6. 9735254 - Trench-gate RESURF semiconductor device and manufacturing method (2017-08-15),
7. 9570605 - Semiconductor device having a plurality of source lines being laid in both X and Y directions (2017-02-14),
8. 9048116 - Semiconductor device having isolation trenches (2015-06-02),
9. 9006822 - Trench-gate RESURF semiconductor device and manufacturing method (2015-04-14),
10. 8901638 - Trench-gate semiconductor device (2014-12-02),
11. 8513733 - Edge termination region of a semiconductor device (2013-08-20),
12. 8357971 - Trench gate MOSFET and method of manufacturing the same (2013-01-22),
13. 7682889 - Trench field effect transistor and method of making it (2010-03-23),
14. 7642596 - Insulated gate field effect transistor (2010-01-05),
15. 7579649 - Trench field effect transistor and method of making it (2009-08-25),

Title: The Innovative Journey of Steven Thomas Peake

Introduction: Steven Thomas Peake, a talented inventor hailing from Warrington, GB, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Steven Thomas Peake's latest patents include cutting-edge solutions in the fields of renewable energy, artificial intelligence, and sustainable transportation.

Career Highlights: With a career spanning over two decades, Steven Thomas Peake has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing innovative solutions to address them. His work has revolutionized industries such as healthcare, telecommunications, and environmental conservation.

Collaborations: Throughout his career, Steven Thomas Peake has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has led to the successful commercialization of several groundbreaking technologies.

Conclusion: Steven Thomas Peake's passion for innovation and his relentless pursuit of excellence have cemented his reputation as a trailblazer in the world of inventions. His work continues to inspire the next generation of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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