The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Feb. 23, 2005
Steven T. Peake, Warrington, GB;
Steven T. Peake, Warrington, GB;
NXP B.V., Eindhoven, NL;
Abstract
A method of manufacturing an insulated gate field effect transistor includes providing a substrate () having a low-doped region (), forming insulated gate trenches () and implanting dopants of a first conductivity type at the base of the trenches (). A body implant is implanted in the low-doped regions between the trenches; and diffused to form an insulated gate transistor structure in which the body implant diffuses to form a p-n junction between a body region () doped to have the second conductivity type above a drain region () doped to have the first conductivity type, the p-n junction being deeper below the first major surface between the trenches than at the trenches. The difference in doping concentration between the low-doped region () and the implanted region at the base of the trenches causes the difference in depth of the body-drain p-n junction formed in the diffusion step.