The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Nov. 03, 2004
Applicant:
Steven T. Peake, Warrington, GB;
Inventor:
Steven T. Peake, Warrington, GB;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/41 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
Abstract
An insulated gate field effect transistor has a drain region (), a body region () of opposite conductivity type and a source region () and an insulated gate () extending laterally over the body region (), defining a channel region () extending in the body region () from a source end adjacent to the source region () to a drain end adjacent to a drain end part () of the drain region (). A conductive shield plate () is provided adjacent to the drain end for shielding the gate. Embodiments include a shield plate extension () extending over the drain region from the shield plate () towards the gate ().