The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Oct. 22, 2008
Steven Thomas Peake, Warrington, GB;
Philip Rutter, Stockport, GB;
Christopher Martin Rogers, Manchester, GB;
Miron Drobnis, Manchester, GB;
Andrew Butler, Jilin, CN;
Steven Thomas Peake, Warrington, GB;
Philip Rutter, Stockport, GB;
Christopher Martin Rogers, Manchester, GB;
Miron Drobnis, Manchester, GB;
Andrew Butler, Jilin, CN;
NXP B.V., Eindhoven, NL;
Abstract
A Trench gate MOS field-effect transistor having a narrow, lightly doped, region extending from a channel accommodating region () of same conductivity type immediately adjacent the trench sidewall. The narrow region may be self-aligned to the top of a lower polysilicon shield region in the trench or may extend the complete depth of the trench. The narrow region advantageously relaxes the manufacturing tolerances, which otherwise require close alignment of the upper polysilicon trench gate to the body-drain junction.