Miron Drobnis

Title: Miron Drobnis – Innovator in Semiconductor Technology

Introduction

Miron Drobnis is a prominent inventor based in Manchester, GB, recognized for his contributions to semiconductor technology. With a total of three patents to his name, Drobnis has made significant advancements, particularly in the design and manufacturing processes of trench gate MOSFETs.

Latest Patents

One of Drobnis's latest patents is titled "Trench gate MOSFET and method of manufacturing the same." This invention relates to a Trench gate MOS field-effect transistor that features a narrow, lightly doped region extending from a channel accommodating region of the same conductivity type, positioned adjacent to the trench sidewall. This narrow region is advantageous as it helps to relax manufacturing tolerances, reducing the need for precise alignment of the upper polysilicon trench gate to the body-drain junction.

Another significant patent is "Trench-gate semiconductor devices and the manufacture thereof." This invention details a metal-oxide-semiconductor trench-gate semiconductor device that includes a substantially intrinsic region located below the gate trench. This arrangement ensures that as the drain-source voltage decreases during the device's activation, the transition occurs more rapidly, thereby minimizing switching losses. The intrinsic region may be created through damage implantation techniques, enhancing the overall efficiency of the device.

Career Highlights

Throughout his career, Miron Drobnis has worked for notable companies such as Koninklijke Philips Corporation N.V. and NXP B.V. His roles in these organizations have allowed him to apply his expertise in semiconductor technology and contribute to groundbreaking innovations.

Collaborations

Drobnis has collaborated with esteemed colleagues including Martin J. Hill and Eddie Huang, both of whom have also made significant contributions to the field of semiconductor research and development. These collaborations have fostered an environment of innovation, enabling advancements that benefit the broader technological landscape.

Conclusion

Miron Drobnis stands out as a key figure in semiconductor innovation. His patents not only reflect his technical expertise but also highlight his commitment to advancing technology in ways that improve efficiency and performance in electronic devices. As he continues his work in this dynamic field, Drobnis remains a notable inventor whose contributions are shaping the future of semiconductor technology.