The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Dec. 10, 2002
Miron Drobnis, Manchester, GB;
Martin J. Hill, Stockport, GB;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
A localised reduced lifetime region ( ) is provided in a semiconductor device formed substantially of silicon. A predetermined concentration of carbon is provided in the region, and then the body is heated to incorporate a lifetime controlling impurity substantially within the carbon region. It is believed that the association between the impurity ions (M ) and the carbon atoms (C) on silicon lattice sites produces C-M complexes with significant capture cross-sections. The carbon may be provided by addition during epitaxial growth of silicon material, during bulk growth of the silicon, or by implantation and/or diffusion.