The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Nov. 12, 2002
Applicant:
Inventors:
Eddie Huang, Stockport, GB;
Miron Drobnis, Manchester, GB;
Martin J. Hill, Stockport, GB;
Raymond J. E. Hueting, Helmond, NL;
Assignee:
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/972 ;
U.S. Cl.
CPC ...
H01L 2/972 ;
Abstract
A metal-oxide-semiconductor trench-gate semiconductor device in which a substantially intrinsic region ( ) is provided below the gate trench ( ), which extends from the base of the trench, substantially across the drain drift region ( ) towards the drain contact region ( ), such that when the drain-source voltage falls during turn-on of the device its rate of decrease is higher. This reduces the switching losses of the device. The substantially intrinsic region ( ) may, for example, be formed by implanting a region below the trench ( ) with a damage implant.