The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Nov. 21, 2012
Applicant:
Nxp B. V., Eindhoven, NL;
Inventors:
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/105 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 29/4238 (2013.01); H01L 29/7803 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/7817 (2013.01); H01L 29/7823 (2013.01); H01L 29/407 (2013.01); H01L 29/41766 (2013.01); H01L 29/7397 (2013.01); H01L 29/0653 (2013.01);
Abstract
A semiconductor uses an isolation trench, and one or more additional trenches to those required for isolation are provided. These additional trenches can be connected between a transistor gate and the drain to provide additional gate-drain capacitance, or else they can be used to form series impedance coupled to the transistor gate. These measures can be used separately or in combination to reduce the switching speed and thereby reduce current spikes.