Hsinchu, Taiwan

Shwang-Ming Jeng

This inventor holds 36 USPTO granted patents and 1 published patent application, primarily in Interconnect Structures. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2003-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shwang-Ming Jeng. Retrieved from https://idiyas.com/inventor/shwang-ming-jeng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 36 

% Patents Active = 63.9

Average Co-Inventor Count = 4.4

ph-index = 6

Forward Citations = 107(Granted Patents)


Location History:

  • Hsin-Chiu, TW (2003 - 2005)
  • Hsin-chu, TW (2003 - 2023)

Company Filing History:


Years Active: 2003-2024

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Areas of Expertise:
Dummy Fin Structures
Low-k Dielectrics
Chemical Mechanical Polish
Interconnect Structures
Plasma Treated Metal
Baking Process
Contact Plugs
Dielectric Film
Semiconductor Device
Bond Pads
Porous Low-k Dielectrics
Multi-layered Metallization
36 patents (USPTO):Explore Patents

Title: Shwang-Ming Jeng: Innovating in Semiconductor Technology

Introduction: Shwang-Ming Jeng, a prominent inventor based in Hsin-Chu, Taiwan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 36 patents, Jeng's innovative work is pushing the boundaries of electronic device performance and efficiency.

Latest Patents: Among his most recent patents is a groundbreaking method for creating dummy fin structures, which is essential for the development of advanced semiconductor devices. The procedure involves depositing a first dielectric film along the sidewalls of a semiconductor fin that extends from a semiconductor substrate. Following this, a dielectric material is laid over the first dielectric film. The innovative method further includes recessing the first dielectric film below the top surface of the semiconductor fin to shape a dummy fin, which comprises an upper portion of the dielectric material. Finally, a gate stack is formed around the sidewalls of both the semiconductor fin and the dummy fin, marking a significant advancement in semiconductor manufacturing techniques.

Career Highlights: Currently, Shwang-Ming Jeng works at Taiwan Semiconductor Manufacturing Company Limited (TSMC), a leading name in the semiconductor industry. His contributions have not only enhanced the efficiency of semiconductor devices but have also solidified his status as a key player in technological innovation.

Collaborations: Throughout his career, Jeng has collaborated with several noted professionals, including Keng-Chu Lin and Chung-Chi Ko. These partnerships have facilitated the sharing of ideas and advancements in semiconductor technology, allowing for more robust and inventive solutions.

Conclusion: Shwang-Ming Jeng's innovative spirit and dedication to the semiconductor field are commendable. With a wealth of patents under his name and valuable collaborations with esteemed colleagues, Jeng continues to make strides that significantly impact the technology we rely on today. His work exemplifies the importance of creativity and collaboration in driving technological advancement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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