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For the Inventor, By the Inventor

Hsin-Chu, Taiwan

Shwang-Ming Jeng

USPTO Granted Patents = 36 

Average Co-Inventor Count = 4.4

ph-index = 6

Forward Citations = 106(Granted Patents)


Location History:

  • Hsin-Chiu, TW (2003 - 2005)
  • Hsin-chu, TW (2003 - 2023)

Company Filing History:

goldMedal36 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2003-2024

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36 patents (USPTO):
1. 12154822 - Dummy fin structures and methods of forming same (2024-11-26),
2. 11664268 - Dummy fin structures and methods of forming same (2023-05-30),
3. 11069558 - Dummy fin structures and methods of forming same (2021-07-20),
4. 10510580 - Dummy fin structures and methods of forming same (2019-12-17),
5. 10312107 - Forming interconnect structure using plasma treated metal hard mask (2019-06-04),
6. 10144109 - Polisher, polishing tool, and polishing method (2018-12-04),
7. 9589856 - Automatically adjusting baking process for low-k dielectric material (2017-03-07),
8. 9368452 - Metal conductor chemical mechanical polish (2016-06-14),
9. 9196551 - Automatically adjusting baking process for low-k dielectric material (2015-11-24),
10. 9087877 - Low-k interconnect structures with reduced RC delay (2015-07-21),
11. 9004914 - Method of and apparatus for active energy assist baking (2015-04-14),
12. 8993435 - Low-k Cu barriers in damascene interconnect structures (2015-03-31),
13. 8877083 - Surface treatment in the formation of interconnect structure (2014-11-04),
14. 8853858 - Curing low-k dielectrics for improving mechanical strength (2014-10-07),
15. 8703612 - Process for forming contact plugs (2014-04-22),

Title: Shwang-Ming Jeng: Innovating in Semiconductor Technology

Introduction: Shwang-Ming Jeng, a prominent inventor based in Hsin-Chu, Taiwan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 36 patents, Jeng's innovative work is pushing the boundaries of electronic device performance and efficiency.

Latest Patents: Among his most recent patents is a groundbreaking method for creating dummy fin structures, which is essential for the development of advanced semiconductor devices. The procedure involves depositing a first dielectric film along the sidewalls of a semiconductor fin that extends from a semiconductor substrate. Following this, a dielectric material is laid over the first dielectric film. The innovative method further includes recessing the first dielectric film below the top surface of the semiconductor fin to shape a dummy fin, which comprises an upper portion of the dielectric material. Finally, a gate stack is formed around the sidewalls of both the semiconductor fin and the dummy fin, marking a significant advancement in semiconductor manufacturing techniques.

Career Highlights: Currently, Shwang-Ming Jeng works at Taiwan Semiconductor Manufacturing Company Limited (TSMC), a leading name in the semiconductor industry. His contributions have not only enhanced the efficiency of semiconductor devices but have also solidified his status as a key player in technological innovation.

Collaborations: Throughout his career, Jeng has collaborated with several noted professionals, including Keng-Chu Lin and Chung-Chi Ko. These partnerships have facilitated the sharing of ideas and advancements in semiconductor technology, allowing for more robust and inventive solutions.

Conclusion: Shwang-Ming Jeng's innovative spirit and dedication to the semiconductor field are commendable. With a wealth of patents under his name and valuable collaborations with esteemed colleagues, Jeng continues to make strides that significantly impact the technology we rely on today. His work exemplifies the importance of creativity and collaboration in driving technological advancement.

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