The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Aug. 09, 2012
Applicants:
Joung-wei Liou, Zhudong, TW;
Keng-chu Lin, Ping-Tung, TW;
Shwang-ming Jeng, Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 21/31 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/522 (2013.01); H01L 2924/30105 (2013.01); H01L 24/05 (2013.01); H01L 2924/01029 (2013.01); H01L 21/31 (2013.01); H01L 2924/01014 (2013.01); H01L 23/53295 (2013.01); H01L 2224/04042 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/19043 (2013.01); H01L 21/02348 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/14 (2013.01); H01L 2924/01005 (2013.01); H01L 2224/05 (2013.01); H01L 2924/01006 (2013.01); H01L 23/562 (2013.01); H01L 2924/19041 (2013.01); H01L 21/76825 (2013.01);
Abstract
An integrated circuit structure including reflective metal pads is provided. The integrated circuit structure includes a semiconductor substrate; a first low-k dielectric layer overlying the semiconductor substrate, wherein the first low-k dielectric layer is a top low-k dielectric layer; a second low-k dielectric layer immediately underlying the first low-k dielectric layer; and a reflective metal pad in the second low-k dielectric layer.
Quick Actions:
Liou, Joung-Wei. (2014). Curing low-k dielectrics for improving mechanical strength (U.S. Patent No. 8853858). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8853858
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile