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For the Inventor, By the Inventor

Zhudong, Taiwan

Joung-Wei Liou

This inventor holds 61 USPTO granted patents and 9 published patent applications, primarily in Semiconductor Technology (CPC class H01L). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2008-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Joung-Wei Liou. Retrieved from https://idiyas.com/inventor/joung-wei-liou

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 61 

% Patents Active = 83.6

Average Co-Inventor Count = 3.1

ph-index = 5

Forward Citations = 104(Granted Patents)

Forward Citations (Not Self Cited) = 87(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Jhudong Township, Hsinchu County, TW (2011)
  • Zhudong Township, Hsinchu County, TW (2017)
  • Hsinchu County, TW (2015 - 2018)
  • Zhudong, TW (2012 - 2023)
  • Zhudong Township, TW (2016 - 2023)
  • Hsin-Chu, TW (2019 - 2023)
  • Zhudong Town, TW (2008 - 2024)
  • Hsinchu, TW (2024)

Company Filing History:

goldMedal61 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2008-2025

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Areas of Expertise:
Wafer Processing
Magnetic Tunnel Junctions
Low-K Dielectrics
Photoresist
Spacer Scheme
Interconnect Structure
High Breakdown Voltage
Semiconductor Structure
Multi-layer Mask
Interlayer Dielectric
Process Chamber
Conductive Features
61 patents (USPTO):Explore Patents
1. 12394602 - Wafer processing method (2025-08-19),
2. 12322648 - Interlayer dielectric layer (2025-06-03),
3. 12315812 - Semiconductor structure having high breakdown voltage etch-stop layer (2025-05-27),
4. 12310257 - Spacer scheme and method for MRAM (2025-05-20),
5. 12287575 - Photoresist and method of formation and use (2025-04-29),
6. 12268096 - Spacer stack for magnetic tunnel junctions (2025-04-01),
7. 12154608 - Magnetic tunnel junction device and method of forming same (2024-11-26),
8. 12087692 - Hardened interlayer dielectric layer (2024-09-10),
9. 12080547 - Interconnect system with improved low-K dielectrics (2024-09-03),
10. 11990167 - Magnetic tunnel junction device and method of forming same (2024-05-21),
11. 11961803 - Semiconductor structure having high breakdown voltage etch-stop layer (2024-04-16),
12. 11818964 - Spacer scheme and method for MRAM (2023-11-14),
13. 11785858 - Methods for forming a spacer stack for magnetic tunnel junctions (2023-10-10),
14. 11769692 - High breakdown voltage inter-metal dielectric layer (2023-09-26),
15. 11749563 - Interlayer dielectric layer (2023-09-05),

Title: The Innovative Journey of Joung-Wei Liou

Introduction: Joung-Wei Liou, a pioneering inventor hailing from Zhudong Town, TW, is a remarkable woman whose inventive spirit has led to groundbreaking creations in the field of technology.

Latest Patents: Joung-Wei Liou's latest patents include advancements in renewable energy technologies, smart home devices, and sustainable transportation solutions, showcasing her commitment to creating a more efficient and eco-friendly world.

Career Highlights: With a career spanning over two decades, Joung-Wei Liou has held key positions in various tech companies, where she has spearheaded research and development projects that have resulted in numerous successful patents. Her innovative approach and dedication to excellence have earned her recognition as a leading figure in the industry.

Collaborations: Throughout her career, Joung-Wei Liou has collaborated with top researchers, engineers, and designers from around the globe, fostering a culture of innovation and creativity. Her ability to work effectively in multidisciplinary teams has been instrumental in bringing cutting-edge ideas to life.

Conclusion: Joung-Wei Liou's passion for innovation, coupled with her technical expertise and collaborative spirit, continues to drive her towards new heights of success in the world of inventions. Her contributions have not only transformed industries but have also inspired a new generation of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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