The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Mar. 29, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Joung-Wei Liou, Hsinchu, TW;
Greg Huang, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53295 (2013.01); H01L 21/76813 (2013.01); H01L 21/76826 (2013.01); H01L 21/76843 (2013.01); H01L 23/53209 (2013.01);
Abstract
The present disclosure relates to a semiconductor device and a manufacturing method thereof, and more particularly to an interlayer dielectric (ILD) layer in a semiconductor device. In one example, the ILD layer is over a substrate and includes a dielectric with a dielectric constant of less than about 3.3 and a hardness of at least about 3 GPa. The semiconductor device also includes an interconnect formed in the ILD layer.
Liou, Joung-Wei. (2024). Hardened interlayer dielectric layer (U.S. Patent No. 12087692). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12087692
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile