The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Nov. 16, 2012
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Chia-Cheng Chou, Keelung, TW;
Mei-Ling Chen, Hsin-Chu, TW;
Hui-Chun Yang, Hsin-Chu, TW;
Po-Cheng Shih, Hsin-Chu, TW;
Joung-Wei Liou, Zhudong, TW;
Shwang-Ming Jeng, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01L 21/302 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/302 (2013.01); H01L 21/30625 (2013.01);
Abstract
A Ultra-Violet (UV) treatment is performed on an exposed surface of a low-k dielectric layer and an exposed surface of a metal line. After the UV treatment, an organo-metallic soak process is performed on the exposed surface of the low-k dielectric layer and the exposed surface of the metal line. The organo-metallic soak process is performed using a process gas including a metal bonded to an organic group.