Company Filing History:
Years Active: 2014-2018
Title: Innovations of Inventor Hui-Chun Yang
Introduction
Hui-Chun Yang is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
One of his latest patents involves a low-k dielectric layer and porogen. This system and method provide a way to form a matrix and incorporate a porogen within it. The porogen features an organic ring structure with fewer than fifteen carbons and a high percentage of single bonds. Additionally, it has a viscosity greater than 1.3 and Reynolds numbers less than 0.5. Another notable patent pertains to semiconductor devices that include conductive features with capping layers. This patent discloses methods of manufacturing semiconductor devices and forming conductive features. The semiconductor device comprises an insulating material layer over a workpiece, which includes a silicon-containing material with about 13% or greater carbon content.
Career Highlights
Hui-Chun Yang is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has contributed to advancements in semiconductor technology, making him a valuable asset to the company.
Collaborations
He has collaborated with notable coworkers such as Joung-Wei Liou and Keng-Chu Lin, further enhancing the impact of his inventions in the field.
Conclusion
Hui-Chun Yang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in semiconductor devices and materials.