The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
May. 18, 2012
Applicants:
Po-cheng Shih, Hsinchu, TW;
Hui-chun Yang, Hsinchu, TW;
Chih-hung Sun, Hsinchu, TW;
Joung-wei Liou, Zhudong Town, TW;
Inventors:
Po-Cheng Shih, Hsinchu, TW;
Hui-Chun Yang, Hsinchu, TW;
Chih-Hung Sun, Hsinchu, TW;
Joung-Wei Liou, Zhudong Town, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/485 (2013.01); H01L 21/76807 (2013.01); H01L 21/76826 (2013.01); H01L 21/76829 (2013.01); H01L 21/76849 (2013.01); H01L 21/76883 (2013.01); H01L 23/5226 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A interconnect structure includes a first etch stop layer over a substrate, a dielectric layer over the first etch stop layer, a conductor in the dielectric layer, and a second etch stop layer over the dielectric layer. The dielectric layer contains carbon and has a top portion and a bottom portion. A difference of C content in the top portion and the bottom portion is less than 2 at %. An oxygen content in a surface of the conductor is less than about 1 at %.