logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8994178 B1

PDFFull Text
Date of Patent:
Mar. 31, 2015

Filed:

May. 18, 2012

Interconnect structure and method for forming the same

Applicants:

Po-cheng Shih, Hsinchu, TW;

Hui-chun Yang, Hsinchu, TW;

Chih-hung Sun, Hsinchu, TW;

Joung-wei Liou, Zhudong Town, TW;

Inventors:

Po-Cheng Shih, Hsinchu, TW;

Hui-Chun Yang, Hsinchu, TW;

Chih-Hung Sun, Hsinchu, TW;

Joung-Wei Liou, Zhudong Town, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., , TW;

Attorney:

Lowe Hauptman & Ham, LLP

Primary Examiner:

Phat X Cao

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/485 (2013.01); H01L 21/76807 (2013.01); H01L 21/76826 (2013.01); H01L 21/76829 (2013.01); H01L 21/76849 (2013.01); H01L 21/76883 (2013.01); H01L 23/5226 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A interconnect structure includes a first etch stop layer over a substrate, a dielectric layer over the first etch stop layer, a conductor in the dielectric layer, and a second etch stop layer over the dielectric layer. The dielectric layer contains carbon and has a top portion and a bottom portion. A difference of C content in the top portion and the bottom portion is less than 2 at %. An oxygen content in a surface of the conductor is less than about 1 at %.

Find Patent Forward Citations

Quick Actions:

Shih, Po-Cheng. (2015). Interconnect structure and method for forming the same (U.S. Patent No. 8994178). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8994178

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…