The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2016

Filed:

Apr. 20, 2012
Applicants:

Hui-chun Yang, Hsin-Chu, TW;

Mei-ling Chen, Hsin-Chu, TW;

Keng-chu Lin, Ping-Tung, TW;

Joung-wei Liou, Zhudong, TW;

Inventors:

Hui-Chun Yang, Hsin-Chu, TW;

Mei-Ling Chen, Hsin-Chu, TW;

Keng-Chu Lin, Ping-Tung, TW;

Joung-Wei Liou, Zhudong, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/532 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/28562 (2013.01); H01L 21/7684 (2013.01); H01L 21/76807 (2013.01); H01L 21/76826 (2013.01); H01L 21/76829 (2013.01); H01L 21/76832 (2013.01); H01L 21/76849 (2013.01); H01L 23/5329 (2013.01); H01L 23/53295 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Semiconductor devices, methods of manufacture thereof, and methods of forming conductive features thereof are disclosed. A semiconductor device includes an insulating material layer disposed over a workpiece. The insulating material layer includes a silicon-containing material comprising about 13% or greater of carbon (C). A conductive feature is disposed within the insulating material layer. The conductive feature includes a capping layer disposed on a top surface thereof.


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