The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Oct. 24, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yu-Yun Peng, Hsin-Chu, TW;
Keng-Chu Lin, Ping-Tung, TW;
Joung-Wei Liou, Zhudong, TW;
Hui-Chun Yang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Methods and apparatus for a low k dielectric layer of porous SiCOH. A method includes placing a semiconductor substrate into a vapor deposition chamber; introducing reactive gases into the vapor deposition chamber to form a dielectric film comprising SiCOH and a decomposable porogen; depositing the dielectric film to have a ratio of Si—CHto SiObonds of less than or equal to 0.25; and performing a cure for a cure time to remove substantially all of the porogen from the dielectric film. In one embodiment the porogen comprises a cyclic hydrocarbon. The porogen may be UV curable. In embodiments, different lowered Si—CHto SiOratios for the deposition of the dielectric film are disclosed. An apparatus of a semiconductor device including the low k dielectric layers is disclosed.