Taiwan Semiconductor Manufacturing Comp. Ltd.

Hui-Chun Yang

Joung-Wei Liou

Keng-Chu Lin

Yu-Yun Peng

Po-Cheng Shih

Mei-Ling Chen

Chih-Hung Sun

Chung-Chi Ko

Kuang-Yuan Hsu

Shwang-Ming Jeng

Chia-Cheng Chou

A system and method for a low-k dielectric layer are provided. A preferred embodiment comprises forming a matrix and forming a porogen within the matrix. The porogen comprises an organic ring structure with fewer than fifteen carbons and a large percentage of single bonds. Additionally, the porogen may have a viscosity greater than 1.3 and a Reynolds numbers less than 0.5.

Low-K dielectric layer and porogen

Semiconductor devices, methods of manufacture thereof, and methods of forming conductive features thereof are disclosed. A semiconductor device includes an insulating material layer disposed over a workpiece. The insulating material layer includes a silicon-containing material comprising about 13% or greater of carbon (C). A conductive feature is disposed within the insulating material layer. The conductive feature includes a capping layer disposed on a top surface thereof.

Semiconductor devices including conductive features with capping layers and methods of forming the same

A method of forming a semiconductor device comprises forming a first etch stop layer over a substrate. The method also comprises forming a low-k dielectric layer comprising carbon over the first etch stop layer. The method further comprises forming an opening in the low-k dielectric layer. The method additionally comprises filling the opening with a conductive layer. The method also comprises performing a remote plasma treatment on the low-k dielectric layer and the conductive layer. The method further comprises forming a second etch stop layer over the treated conductive layer and the treated low-k dielectric layer.

Method of forming semiconductor device using remote plasma treatment

Methods and apparatus for a low k dielectric layer of porous SiCOH. A method includes placing a semiconductor substrate into a vapor deposition chamber; introducing reactive gases into the vapor deposition chamber to form a dielectric film comprising SiCOH and a decomposable porogen; depositing the dielectric film to have a ratio of Si&#x2014;CHto SiObonds of less than or equal to 0.25; and performing a cure for a cure time to remove substantially all of the porogen from the dielectric film. In one embodiment the porogen comprises a cyclic hydrocarbon. The porogen may be UV curable. In embodiments, different lowered Si&#x2014;CHto SiOratios for the deposition of the dielectric film are disclosed. An apparatus of a semiconductor device including the low k dielectric layers is disclosed.

Apparatus and methods for low k dielectric layers

One embodiment is a method for semiconductor processing. In this method, a precursor film is provided over a semiconductor substrate, where the precursor film is made of a structural former and porogen. Prior to cross-linking, the porogen is removed by exposure to UV radiation having one or more wavelengths in the range of 150 nm to 300 nm, while a temperature of 300&#xb0; C. to 500&#xb0; C. is applied to the semiconductor substrate. Meanwhile, a Argon:Helium flow rate of 80&#x3e;Ar&#x3e;10 slm, 80&#x3e;He&#x3e;10 slm is set for the ambient substrate environment where the ratio of Ar:He ranges from 0:1 to 1:0 by volume or molality.

High UV curing efficiency for low-k dielectrics

A interconnect structure includes a first etch stop layer over a substrate, a dielectric layer over the first etch stop layer, a conductor in the dielectric layer, and a second etch stop layer over the dielectric layer. The dielectric layer contains carbon and has a top portion and a bottom portion. A difference of C content in the top portion and the bottom portion is less than 2 at %. An oxygen content in a surface of the conductor is less than about 1 at %.

Interconnect structure and method for forming the same

Apparatus and methods for low K dielectric layers

A Ultra-Violet (UV) treatment is performed on an exposed surface of a low-k dielectric layer and an exposed surface of a metal line. After the UV treatment, an organo-metallic soak process is performed on the exposed surface of the low-k dielectric layer and the exposed surface of the metal line. The organo-metallic soak process is performed using a process gas including a metal bonded to an organic group.

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Hsin-Chu, Taiwan

Hui-Chun Yang